BUK9K35-60E,115 MOSFET BUK9K35-60E/SOT1205/LFPAK56D
♠ Product Description
| Product Attribute | Attribute Value |
| Manufacturer: | Nexperia |
| Product Category: | MOSFET |
| RoHS: | Details |
| Technology: | Si |
| Mounting Style: | SMD/SMT |
| Package / Case: | LFPAK-56D-8 |
| Transistor Polarity: | N-Channel |
| Number of Channels: | 2 Channel |
| Vds - Drain-Source Breakdown Voltage: | 60 V |
| Id - Continuous Drain Current: | 22 A |
| Rds On - Drain-Source Resistance: | 32 mOhms |
| Vgs - Gate-Source Voltage: | - 10 V, + 10 V |
| Vgs th - Gate-Source Threshold Voltage: | 1.4 V |
| Qg - Gate Charge: | 7.8 nC |
| Minimum Operating Temperature: | - 55 C |
| Maximum Operating Temperature: | + 175 C |
| Pd - Power Dissipation: | 38 W |
| Channel Mode: | Enhancement |
| Qualification: | AEC-Q101 |
| Packaging: | Reel |
| Packaging: | Cut Tape |
| Packaging: | MouseReel |
| Brand: | Nexperia |
| Configuration: | Dual |
| Fall Time: | 10.6 ns |
| Product Type: | MOSFET |
| Rise Time: | 11.3 ns |
| Factory Pack Quantity: | 1500 |
| Subcategory: | MOSFETs |
| Transistor Type: | 2 N-Channel |
| Typical Turn-Off Delay Time: | 14.9 ns |
| Typical Turn-On Delay Time: | 7.1 ns |
| Part # Aliases: | 934066977115 |
| Unit Weight: | 0.003958 oz |
♠ BUK9K35-60E Dual N-channel 60 V, 35 mΩ logic level MOSFET
Dual logic level N-channel MOSFET in an LFPAK56D (Dual Power-SO8) package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications.
• Dual MOSFET
• Q101 Compliant
• Repetitive avalanche rated
• Suitable for thermally demanding environments due to 175 °C rating
• True logic level gate with VGS(th) rating of greater than 0.5 V at 175 °C
• 12 V Automotive systems
• Motors, lamps and solenoid control
• Transmission control
• Ultra high performance power switching
