FDMC6679AZ MOSFET -30V P-Channel Power Trench
♠ Product Description
| Product Attribute | Attribute Value |
| Manufacturer: | onsemi |
| Product Category: | MOSFET |
| RoHS: | Details |
| Technology: | Si |
| Mounting Style: | SMD/SMT |
| Package / Case: | Power-33-8 |
| Transistor Polarity: | P-Channel |
| Number of Channels: | 1 Channel |
| Vds - Drain-Source Breakdown Voltage: | 30 V |
| Id - Continuous Drain Current: | 20 A |
| Rds On - Drain-Source Resistance: | 10 mOhms |
| Vgs - Gate-Source Voltage: | - 25 V, + 25 V |
| Vgs th - Gate-Source Threshold Voltage: | 1.8 V |
| Qg - Gate Charge: | 37 nC |
| Minimum Operating Temperature: | - 55 C |
| Maximum Operating Temperature: | + 150 C |
| Pd - Power Dissipation: | 41 W |
| Channel Mode: | Enhancement |
| Tradename: | PowerTrench |
| Packaging: | Reel |
| Packaging: | Cut Tape |
| Packaging: | MouseReel |
| Brand: | onsemi / Fairchild |
| Configuration: | Single |
| Forward Transconductance - Min: | 46 S |
| Height: | 0.8 mm |
| Length: | 3.3 mm |
| Product Type: | MOSFET |
| Series: | FDMC6679AZ |
| Factory Pack Quantity: | 3000 |
| Subcategory: | MOSFETs |
| Transistor Type: | 1 P-Channel |
| Width: | 3.3 mm |
| Unit Weight: | 0.005832 oz |
♠ FDMC6679AZ P-Channel PowerTrench® MOSFET -30 V, -20 A, 10 mΩ
The FDMC6679AZ has been designed to minimize losses in load switch applications. Advancements in both silicon and package technologies have been combined to offer the lowest rDS(on) and ESD protection.
• Max rDS(on) = 10 mΩ at VGS = -10 V, ID = -11.5 A
• Max rDS(on) = 18 mΩ at VGS = -4.5 V, ID = -8.5 A
• HBM ESD protection level of 8 kV typical(note 3)
• Extended VGSS range (-25 V) for battery applications
• High performance trench technology for extremely low rDS(on)
• High power and current handling capability
• Termination is Lead-free and RoHS Compliant
• Load Switch in Notebook and Server
• Notebook Battery Pack Power Management
