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Hot sale Pcb Semiconductor - FDV301N MOSFET N-Ch Digital – Shinzo

Hot sale Pcb Semiconductor - FDV301N  MOSFET N-Ch Digital – Shinzo Featured Image
  • Hot sale Pcb Semiconductor - FDV301N  MOSFET N-Ch Digital – Shinzo

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We believe in: Innovation is our soul and spirit. High-quality is our life. Purchaser need is our God for I O Controller Interface IC, Double Ic Amplifier, Soc Integrated Circuits, With superb service and quality, and an enterprise of foreign trade featuring validity and competitiveness, that will be trusted and welcomed by its clients and creates happiness to its employees.
Hot sale Pcb Semiconductor - FDV301N MOSFET N-Ch Digital – Shinzo Detail:

♠ Product Description

Product Attribute Attribute Value
Manufacturer: onsemi
Product Category: MOSFET
RoHS:  Details
Technology: Si
Mounting Style: SMD/SMT
Package / Case: SOT-23-3
Transistor Polarity: N-Channel
Number of Channels: 1 Channel
Vds – Drain-Source Breakdown Voltage: 25 V
Id – Continuous Drain Current: 220 mA
Rds On – Drain-Source Resistance: 5 Ohms
Vgs – Gate-Source Voltage: - 8 V, + 8 V
Vgs th – Gate-Source Threshold Voltage: 700 mV
Qg – Gate Charge: 700 pC
Minimum Operating Temperature: - 55 C
Maximum Operating Temperature: + 150 C
Pd – Power Dissipation: 350 mW
Channel Mode: Enhancement
Packaging: Reel
Packaging: Cut Tape
Packaging: MouseReel
Brand: onsemi / Fairchild
Configuration: Single
Fall Time: 6 ns
Forward Transconductance – Min: 0.2 S
Height: 1.2 mm
Length: 2.9 mm
Product: MOSFET Small Signal
Product Type: MOSFET
Rise Time: 6 ns
Series: FDV301N
Factory Pack Quantity: 3000
Subcategory: MOSFETs
Transistor Type: 1 N-Channel
Type: FET
Typical Turn-Off Delay Time: 3.5 ns
Typical Turn-On Delay Time: 3.2 ns
Width: 1.3 mm
Part # Aliases: FDV301N_NL
Unit Weight: 0.000282 oz

♠ Digital FET, N-Channel FDV301N, FDV301N-F169

This N−Channel logic level enhancement mode field effect transistor is produced using onsemi’s proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on−state resistance. This device has been designed especially for low voltage applications as a replacement for digital transistors. Since bias resistors are not required, this one N−channel FET can replace several different digital transistors, with different bias resistor values.


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  • The accounts manager made a detailed introduction about the product, so that we have a comprehensive understanding of the product, and ultimately we decided to cooperate.
    5 Stars By Phoebe from Hungary - 2018.12.28 15:18
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    5 Stars By Albert from Mauritius - 2018.07.12 12:19

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