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IKW50N65EH5XKSA1 IGBT Transistors INDUSTRY 14

IKW50N65EH5XKSA1  IGBT Transistors INDUSTRY 14 Featured Image
  • IKW50N65EH5XKSA1  IGBT Transistors INDUSTRY 14

Short Description:

Manufacturers: Infineon Technologies
Product Category: Transistors – IGBTs – Single
Data Sheet: IKW50N65EH5XKSA1
Description: IGBT TRENCH 650V 80A TO247-3
RoHS status: RoHS Compliant


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Product Detail

Features

Applications

Product Tags

♠ Product Description

Product Attribute Attribute Value
Manufacturer: Infineon
Product Category: IGBT Transistors
Technology: Si
Package / Case: TO-247-3
Mounting Style: Through Hole
Configuration: Single
Collector- Emitter Voltage VCEO Max: 650 V
Collector-Emitter Saturation Voltage: 1.65 V
Maximum Gate Emitter Voltage: 20 V
Continuous Collector Current at 25 C: 80 A
Pd - Power Dissipation: 275 W
Minimum Operating Temperature: - 40 C
Maximum Operating Temperature: + 175 C
Series: Trenchstop IGBT5
Packaging: Tube
Brand: Infineon Technologies
Gate-Emitter Leakage Current: 100 nA
Height: 20.7 mm
Length: 15.87 mm
Product Type: IGBT Transistors
Factory Pack Quantity: 240
Subcategory: IGBTs
Tradename: TRENCHSTOP
Width: 5.31 mm
Part # Aliases: IKW50N65EH5 SP001257944
Unit Weight: 0.213383 oz

 


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  • HighspeedH5technologyoffering
    •Best-in-Classefficiencyinhardswitchingandresonant topologies
    •PlugandplayreplacementofpreviousgenerationIGBTs
    •650Vbreakdownvoltage
    •LowgatechargeQG
    •IGBTcopackedwithfull-ratedRAPID1fastandsoftantiparallel diode
    •Maximumjunctiontemperature175°C
    •QualifiedaccordingtoJEDECfortargetapplications
    •Pb-freeleadplating;RoHScompliant
    •CompleteproductspectrumandPSpiceModels: http://www.infineon.com/igbt/

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