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LM74800QDRRRQ1 3-V to 65-V, automotive ideal diode controller driving back to back NFETs 12-WSON -40 to 125

LM74800QDRRRQ1  3-V to 65-V, automotive ideal diode controller driving back to back NFETs 12-WSON -40 to 125 Featured Image
  • LM74800QDRRRQ1  3-V to 65-V, automotive ideal diode controller driving back to back NFETs 12-WSON -40 to 125

Short Description:

Manufacturers: Infineon Technologies
Product Category: PMIC – Power Distribution Switches, Load Drivers
Data Sheet: BTS5215LAUMA1
Description: IC SWITCH PWR HISIDE DSO-12
RoHS status: RoHS Compliant


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Product Detail

Features

Applications

Product Tags

♠ Product Description

Product Attribute Attribute Value
Manufacturer: Texas Instruments
Product Category: Power Management Specialized - PMIC
Series: LM7480-Q1
Type: Automotive
Mounting Style: SMD/SMT
Package / Case: WSON-12
Output Current: 2 A, 4 A
Input Voltage Range: 3 V to 65 V
Output Voltage Range: 12.5 V to 14.5 V
Minimum Operating Temperature: - 40 C
Maximum Operating Temperature: + 125 C
Packaging: Reel
Packaging: Cut Tape
Packaging: MouseReel
Brand: Texas Instruments
Input Voltage, Max: 65 V
Input Voltage, Min: 3 V
Maximum Output Voltage: 14.5 V
Moisture Sensitive: Yes
Operating Supply Voltage: 6 V to 37 V
Product Type: Power Management Specialized - PMIC
Factory Pack Quantity: 3000
Subcategory: PMIC - Power Management ICs

♠ LM7480-Q1 Ideal Diode Controller with Load Dump Protection

The LM7480x-Q1 ideal diode controller drives and controls external back to back N-Channel MOSFETs to emulate an ideal diode rectifier with power path ON/OFF control and overvoltage protection. The wide input supply of 3 V to 65 V allows protection and control of 12-V and 24-V automotive battery powered ECUs. The device can withstand and protect the loads from negative supply voltages down to –65 V. An integrated ideal diode controller (DGATE) drives the first MOSFET to replace a Schottky diode for reverse input protection and output voltage holdup. With a second MOSFET in the power path the device allows load disconnect (ON/OFF control) and overvoltage protection using HGATE control. The device features an adjustable overvoltage cut-off protection feature. LM7480-Q1 has two variants, LM74800-Q1 and LM74801-Q1. LM74800-Q1 employs reverse current blocking using linear regulation and comparator scheme vs. LM74801-Q1 which supports comparator based scheme. With Common Drain configuration of the power MOSFETs, the mid-point can be utilized for OR-ing designs using an another ideal diode. The LM7480x-Q1 has a maximum voltage rating of 65 V. The loads can be protected from extended overvoltage transients like 200-V Unsuppressed Load Dumps in 24-V Battery systems by configuring the device with external MOSFETs in Common Source topology


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  • • AEC-Q100 qualified for automotive applications
    – Device temperature grade 1:
    –40°C to +125°C ambient operating temperature range
    – Device HBM ESD classification level 2
    – Device CDM ESD classification level C4B
    • 3-V to 65-V input range
    • Reverse input protection down to –65 V
    • Drives external back-to-back N-Channel MOSFETs in common drain and common source configurations
    • Ideal diode operation with 10.5-mV A to C forward voltage drop regulation (LM74800-Q1)
    • Low reverse detection threshold (–4.5 mV) with fast response (0.5 µs)
    • 20-mA peak gate (DGATE) turnon current
    • 2.6-A peak DGATE turnoff current
    • Adjustable overvoltage protection
    • Low 2.87-µA shutdown current (EN/UVLO=Low)
    • Meets automotive ISO7637 transient requirements with a suitable TVS diode
    • Available in space saving 12-Pin WSON package

    • Automotive battery protection
    – ADAS domain controller
    – Camera ECU
    – Head Unit
    – USB HUBs
    • Active ORing for redundant power

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