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MBT3904DW1T1G Bipolar Transistors – BJT 200mA 60V Dual NPN

MBT3904DW1T1G  Bipolar Transistors – BJT 200mA 60V Dual NPN Featured Image
  • MBT3904DW1T1G  Bipolar Transistors – BJT 200mA 60V Dual NPN

Short Description:

Manufacturers: ON Semiconductor

Product Category: Transistors – Bipolar (BJT) – Arrays

Data Sheet: MBT3904DW1T1G

Description: TRANS 2NPN 40V 0.2A SC88

RoHS status: RoHS Compliant


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Product Detail

Features

Product Tags

♠ Product Description

Product Attribute Attribute Value
Manufacturer: onsemi
Product Category: Bipolar Transistors - BJT
RoHS:  Details
Mounting Style: SMD/SMT
Package / Case: SC-70-6
Transistor Polarity: NPN
Configuration: Dual
Collector- Emitter Voltage VCEO Max: 40 V
Collector- Base Voltage VCBO: 60 V
Emitter- Base Voltage VEBO: 6 V
Collector-Emitter Saturation Voltage: 300 mV
Maximum DC Collector Current: 200 mA
Pd - Power Dissipation: 150 mW
Gain Bandwidth Product fT: 300 MHz
Minimum Operating Temperature: - 55 C
Maximum Operating Temperature: + 150 C
Series: MBT3904DW1
Packaging: Reel
Packaging: Cut Tape
Packaging: MouseReel
Brand: onsemi
Continuous Collector Current: - 2 A
DC Collector/Base Gain hfe Min: 40
Height: 0.9 mm
Length: 2 mm
Product Type: BJTs - Bipolar Transistors
Factory Pack Quantity: 3000
Subcategory: Transistors
Technology: Si
Width: 1.25 mm
Part # Aliases: MBT3904DW1T3G
Unit Weight: 0.000988 oz

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  • • hFE, 100−300 • Low VCE(sat), ≤ 0.4 V

    • Simplifies Circuit Design

    • Reduces Board Space

    • Reduces Component Count

    • Available in 8 mm, 7−inch/3,000 Unit Tape and Reel

    • S and NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable

    • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant

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