NCV8402ADDR2G MOSFET 42V2A
♠ Product Description
| Product Attribute | Attribute Value |
| Manufacturer: | onsemi |
| Product Category: | MOSFET |
| RoHS: | Details |
| Technology: | Si |
| Mounting Style: | SMD/SMT |
| Package / Case: | SOIC-8 |
| Transistor Polarity: | N-Channel |
| Number of Channels: | 2 Channel |
| Vds - Drain-Source Breakdown Voltage: | 55 V |
| Id - Continuous Drain Current: | 2 A |
| Rds On - Drain-Source Resistance: | 165 mOhms |
| Vgs - Gate-Source Voltage: | - 14 V, + 14 V |
| Vgs th - Gate-Source Threshold Voltage: | 1.3 V |
| Qg - Gate Charge: | - |
| Minimum Operating Temperature: | - 55 C |
| Maximum Operating Temperature: | + 150 C |
| Pd - Power Dissipation: | 800 mW |
| Channel Mode: | Enhancement |
| Qualification: | AEC-Q101 |
| Packaging: | Reel |
| Packaging: | Cut Tape |
| Packaging: | MouseReel |
| Brand: | onsemi |
| Configuration: | Single |
| Product Type: | MOSFET |
| Series: | NCV8402AD |
| Factory Pack Quantity: | 2500 |
| Subcategory: | MOSFETs |
| Transistor Type: | 2 N-Channel |
| Unit Weight: | 0.002610 oz |
♠Dual Self-Protected Low-Side Driver with Temperature and Current Limit
NCV8402D/AD is a dual protected Low−Side Smart Discrete device. The protection features include overcurrent, overtemperature, ESD and integrated Drain−to−Gate clamping for overvoltage protection. This device offers protection and is suitable for harsh automotive environments.
• Short−Circuit Protection
• Thermal Shutdown with Automatic Restart
• Overvoltage Protection
• Integrated Clamp for Inductive Switching
• ESD Protection
• dV/dt Robustness
• Analog Drive Capability (Logic Level Input)
• NCV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant
• Switch a Variety of Resistive, Inductive and Capacitive Loads
• Can Replace Electromechanical Relays and Discrete Circuits
• Automotive / Industrial
