NTJD4001NT1G MOSFET 30V 250mA Dual N-Channel
♠ Product Description
| Product Attribute | Attribute Value |
| Manufacturer: | onsemi |
| Product Category: | MOSFET |
| RoHS: | Details |
| Technology: | Si |
| Mounting Style: | SMD/SMT |
| Package / Case: | SC-88-6 |
| Transistor Polarity: | N-Channel |
| Number of Channels: | 2 Channel |
| Vds - Drain-Source Breakdown Voltage: | 30 V |
| Id - Continuous Drain Current: | 250 mA |
| Rds On - Drain-Source Resistance: | 1.5 Ohms |
| Vgs - Gate-Source Voltage: | - 20 V, + 20 V |
| Vgs th - Gate-Source Threshold Voltage: | 800 mV |
| Qg - Gate Charge: | 900 pC |
| Minimum Operating Temperature: | - 55 C |
| Maximum Operating Temperature: | + 150 C |
| Pd - Power Dissipation: | 272 mW |
| Channel Mode: | Enhancement |
| Packaging: | Reel |
| Packaging: | Cut Tape |
| Packaging: | MouseReel |
| Brand: | onsemi |
| Configuration: | Dual |
| Fall Time: | 82 ns |
| Forward Transconductance - Min: | 80 mS |
| Height: | 0.9 mm |
| Length: | 2 mm |
| Product: | MOSFET Small Signal |
| Product Type: | MOSFET |
| Rise Time: | 23 ns |
| Series: | NTJD4001N |
| Factory Pack Quantity: | 3000 |
| Subcategory: | MOSFETs |
| Transistor Type: | 2 N-Channel |
| Typical Turn-Off Delay Time: | 94 ns |
| Typical Turn-On Delay Time: | 17 ns |
| Width: | 1.25 mm |
| Unit Weight: | 0.010229 oz |
• Low Gate Charge for Fast Switching
• Small Footprint − 30% Smaller than TSOP−6
• ESD Protected Gate
• AEC Q101 Qualified − NVTJD4001N
• These Devices are Pb−Free and are RoHS Compliant
• Low Side Load Switch
• Li−Ion Battery Supplied Devices − Cell Phones, PDAs, DSC
• Buck Converters
• Level Shifts
