NTMFS5C628NLT1G MOSFET TRENCH 6 60V NFET
♠ Product Description
| Product Attribute | Attribute Value |
| Manufacturer: | onsemi |
| Product Category: | MOSFET |
| Technology: | Si |
| Mounting Style: | SMD/SMT |
| Package / Case: | SO-8FL-4 |
| Transistor Polarity: | N-Channel |
| Number of Channels: | 1 Channel |
| Vds - Drain-Source Breakdown Voltage: | 60 V |
| Id - Continuous Drain Current: | 150 A |
| Rds On - Drain-Source Resistance: | 2.4 mOhms |
| Vgs - Gate-Source Voltage: | - 20 V, + 20 V |
| Vgs th - Gate-Source Threshold Voltage: | 1.2 V |
| Qg - Gate Charge: | 52 nC |
| Minimum Operating Temperature: | - 55 C |
| Maximum Operating Temperature: | + 175 C |
| Pd - Power Dissipation: | 3.7 W |
| Channel Mode: | Enhancement |
| Packaging: | Reel |
| Packaging: | Cut Tape |
| Packaging: | MouseReel |
| Brand: | onsemi |
| Configuration: | Single |
| Fall Time: | 70 ns |
| Forward Transconductance - Min: | 110 S |
| Product Type: | MOSFET |
| Rise Time: | 150 ns |
| Factory Pack Quantity: | 1500 |
| Subcategory: | MOSFETs |
| Transistor Type: | 1 N-Channel |
| Typical Turn-Off Delay Time: | 28 ns |
| Typical Turn-On Delay Time: | 15 ns |
| Unit Weight: | 0.006173 oz |
• Small Footprint (5×6 mm) for Compact Design
• Low RDS(on) to Minimize Conduction Losses
• Low QG and Capacitance to Minimize Driver Losses
• These Devices are Pb−Free and are RoHS Compliant
