NTZD3154NT1G MOSFET 20V 540mA Dual N-Channel w/ESD
♠ Product Description
| Product Attribute | Attribute Value |
| Manufacturer: | onsemi |
| Product Category: | MOSFET |
| Technology: | Si |
| Mounting Style: | SMD/SMT |
| Package / Case: | SOT-563-6 |
| Transistor Polarity: | N-Channel |
| Number of Channels: | 2 Channel |
| Vds - Drain-Source Breakdown Voltage: | 20 V |
| Id - Continuous Drain Current: | 570 mA |
| Rds On - Drain-Source Resistance: | 550 mOhms, 550 mOhms |
| Vgs - Gate-Source Voltage: | - 7 V, + 7 V |
| Vgs th - Gate-Source Threshold Voltage: | 450 mV |
| Qg - Gate Charge: | 1.5 nC |
| Minimum Operating Temperature: | - 55 C |
| Maximum Operating Temperature: | + 150 C |
| Pd - Power Dissipation: | 280 mW |
| Channel Mode: | Enhancement |
| Packaging: | Reel |
| Packaging: | Cut Tape |
| Packaging: | MouseReel |
| Brand: | onsemi |
| Configuration: | Dual |
| Fall Time: | 8 ns, 8 ns |
| Forward Transconductance - Min: | 1 S, 1 S |
| Height: | 0.55 mm |
| Length: | 1.6 mm |
| Product: | MOSFET Small Signal |
| Product Type: | MOSFET |
| Rise Time: | 4 ns, 4 ns |
| Series: | NTZD3154N |
| Factory Pack Quantity: | 4000 |
| Subcategory: | MOSFETs |
| Transistor Type: | 2 N-Channel |
| Typical Turn-Off Delay Time: | 16 ns, 16 ns |
| Typical Turn-On Delay Time: | 6 ns, 6 ns |
| Width: | 1.2 mm |
| Unit Weight: | 0.000106 oz |
• Low RDS(on) Improving System Efficiency
• Low Threshold Voltage
• Small Footprint 1.6 x 1.6 mm
• ESD Protected Gate
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant
• Load/Power Switches
• Power Supply Converter Circuits
• Battery Management
• Cell Phones, Digital Cameras, PDAs, Pagers, etc.
