SI2305CDS-T1-GE3 MOSFET -8V Vds 8V Vgs SOT-23
♠ Product Description
| Product Attribute | Attribute Value |
| Manufacturer: | Vishay |
| Product Category: | MOSFET |
| Technology: | Si |
| Mounting Style: | SMD/SMT |
| Package / Case: | SOT-23-3 |
| Transistor Polarity: | P-Channel |
| Number of Channels: | 1 Channel |
| Vds - Drain-Source Breakdown Voltage: | 8 V |
| Id - Continuous Drain Current: | 5.8 A |
| Rds On - Drain-Source Resistance: | 35 mOhms |
| Vgs - Gate-Source Voltage: | - 8 V, + 8 V |
| Vgs th - Gate-Source Threshold Voltage: | 1 V |
| Qg - Gate Charge: | 12 nC |
| Minimum Operating Temperature: | - 55 C |
| Maximum Operating Temperature: | + 150 C |
| Pd - Power Dissipation: | 1.7 W |
| Channel Mode: | Enhancement |
| Tradename: | TrenchFET |
| Packaging: | Reel |
| Packaging: | Cut Tape |
| Packaging: | MouseReel |
| Brand: | Vishay Semiconductors |
| Configuration: | Single |
| Fall Time: | 10 ns |
| Height: | 1.45 mm |
| Length: | 2.9 mm |
| Product Type: | MOSFET |
| Rise Time: | 20 ns |
| Series: | SI2 |
| Factory Pack Quantity: | 3000 |
| Subcategory: | MOSFETs |
| Transistor Type: | 1 P-Channel |
| Typical Turn-Off Delay Time: | 40 ns |
| Typical Turn-On Delay Time: | 20 ns |
| Width: | 1.6 mm |
| Part # Aliases: | SI2305CDS-T1-BE3 SI2305CDS-GE3 |
| Unit Weight: | 0.000282 oz |
• Halogen-free According to IEC 61249-2-21 Definition
• TrenchFET® Power MOSFET
• 100 % Rg Tested
• Compliant to RoHS Directive 2002/95/EC
• Load Switch for Portable Devices
• DC/DC Converter
