SI9435BDY-T1-E3 MOSFET 30V 5.7A 0.042Ohm
♠ Product Description
| Product Attribute | Attribute Value |
| Manufacturer: | Vishay |
| Product Category: | MOSFET |
| RoHS: | Details |
| Technology: | Si |
| Mounting Style: | SMD/SMT |
| Package/Case: | SOIC-8 |
| Transistor Polarity: | P-Channel |
| Number of Channels: | 1 Channel |
| Vds - Drain-Source Breakdown Voltage: | 30 V |
| Id - Continuous Drain Current: | 5.7 A |
| Rds On - Drain-Source Resistance: | 42 mOhms |
| Vgs - Gate-Source Voltage: | - 10 V, + 10 V |
| Vgs th - Gate-Source Threshold Voltage: | 1 V |
| Qg - Gate Charge: | 24 nC |
| Minimum Operating Temperature: | - 55 C |
| Maximum Operating Temperature: | + 150 C |
| Pd - Power Dissipation: | 2.5 W |
| Channel Mode: | Enhancement |
| Tradename: | TrenchFET |
| Packaging: | Reel |
| Packaging: | Cut Tape |
| Packaging: | MouseReel |
| Brand: | Vishay Semiconductors |
| Configuration: | Single |
| Fall Time: | 30 ns |
| Forward Transconductance - Min: | 13 S |
| Product Type: | MOSFET |
| Rise Time: | 42 ns |
| Series: | SI9 |
| Factory Pack Quantity: | 2500 |
| Subcategory: | MOSFETs |
| Transistor Type: | 1 P-Channel |
| Typical Turn-Off Delay Time: | 30 ns |
| Typical Turn-On Delay Time: | 14 ns |
| Part # Aliases: | SI9435BDY-E3 |
| Unit Weight: | 750 mg |
• Halogen-free According to IEC 61249-2-21 Definition
• TrenchFET® Power MOSFET
• Compliant to RoHS Directive 2002/95/EC
