SI9945BDY-T1-GE3 MOSFET 60V Vds 20V Vgs SO-8
♠ Product Description
| Product Attribute | Attribute Value |
| Manufacturer: | Vishay |
| Product Category: | MOSFET |
| RoHS: | Details |
| Technology: | Si |
| Mounting Style: | SMD/SMT |
| Package/Case: | SOIC-8 |
| Transistor Polarity: | N-Channel |
| Number of Channels: | 2 Channel |
| Vds - Drain-Source Breakdown Voltage: | 60 V |
| Id - Continuous Drain Current: | 5.3 A |
| Rds On - Drain-Source Resistance: | 58 mOhms |
| Vgs - Gate-Source Voltage: | - 20 V, + 20 V |
| Vgs th - Gate-Source Threshold Voltage: | 1 V |
| Qg - Gate Charge: | 13 nC |
| Minimum Operating Temperature: | - 55 C |
| Maximum Operating Temperature: | + 150 C |
| Pd - Power Dissipation: | 3.1 W |
| Channel Mode: | Enhancement |
| Tradename: | TrenchFET |
| Packaging: | Reel |
| Packaging: | Cut Tape |
| Packaging: | MouseReel |
| Brand: | Vishay Semiconductors |
| Configuration: | Dual |
| Fall Time: | 10 ns |
| Forward Transconductance - Min: | 15 S |
| Product Type: | MOSFET |
| Rise Time: | 15 ns, 65 ns |
| Series: | SI9 |
| Factory Pack Quantity: | 2500 |
| Subcategory: | MOSFETs |
| Transistor Type: | 2 N-Channel |
| Typical Turn-Off Delay Time: | 10 ns, 15 ns |
| Typical Turn-On Delay Time: | 15 ns, 20 ns |
| Part # Aliases: | SI9945BDY-GE3 |
| Unit Weight: | 750 mg |
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