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STD4NK100Z MOSFET Automotive-grade N-channel 1000 V, 5.6 Ohm typ 2.2 A SuperMESH Power MOSFET

STD4NK100Z  MOSFET Automotive-grade N-channel 1000 V, 5.6 Ohm typ 2.2 A SuperMESH Power MOSFET Featured Image
  • STD4NK100Z  MOSFET Automotive-grade N-channel 1000 V, 5.6 Ohm typ 2.2 A SuperMESH Power MOSFET

Short Description:

Manufacturers: STMicroelectronics
Product Category:MOSFET
Data Sheet: STD4NK100Z
Description: Power MOSFETs
RoHS status: RoHS Compliant


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Product Detail

Features

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Product Tags

♠ Product Description

Product Attribute Attribute Value
Manufacturer: STMicroelectronics
Product Category: MOSFET
RoHS:  Details
Technology: Si
Mounting Style: SMD/SMT
Package / Case: TO-252-3
Transistor Polarity: N-Channel
Number of Channels: 1 Channel
Vds - Drain-Source Breakdown Voltage: 1 kV
Id - Continuous Drain Current: 2.2 A
Rds On - Drain-Source Resistance: 6.8 Ohms
Vgs - Gate-Source Voltage: - 30 V, + 30 V
Vgs th - Gate-Source Threshold Voltage: 4.5 V
Qg - Gate Charge: 18 nC
Minimum Operating Temperature: - 55 C
Maximum Operating Temperature: + 150 C
Pd - Power Dissipation: 90 W
Channel Mode: Enhancement
Qualification: AEC-Q101
Tradename: SuperMESH
Series: STD4NK100Z
Packaging: Reel
Packaging: Cut Tape
Packaging: MouseReel
Brand: STMicroelectronics
Configuration: Single
Fall Time: 39 ns
Height: 2.4 mm
Length: 10.1 mm
Product: Power MOSFETs
Product Type: MOSFET
Rise Time: 7.5 ns
Factory Pack Quantity: 2500
Subcategory: MOSFETs
Transistor Type: 1 N-Channel
Type: SuperMESH
Typical Turn-On Delay Time: 15 ns
Width: 6.6 mm
Unit Weight: 0.011640 oz

 

♠ Automotive-grade N-channel 1000 V, 5.6 Ω typ., 2.2 A SuperMESH™ Power MOSFET Zener-protected in a DPAK

This device is an N-channel Zener-protected Power MOSFET developed using STMicroelectronics’ SuperMESH™ technology, achieved through optimization of ST’s well established strip-based PowerMESH™ layout. In addition to a significant reduction in on-resistance, this device is designed to ensure a high level of dv/dt capability for the most demanding applications.


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  • • Designed for automotive applications and AEC-Q101 qualified

    • Extremely high dv/dt capability

    • 100% avalanche tested

    • Gate charge minimized

    • Very low intrinsic capacitance

    • Zener-protected

    • Switching application

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