VNS1NV04DPTR-E Gate Drivers OMNIFET POWER MOSFET 40V 1.7 A
♠ Product Description
| Product Attribute | Attribute Value |
| Manufacturer: | STMicroelectronics |
| Product Category: | Gate Drivers |
| Product: | MOSFET Gate Drivers |
| Type: | Low-Side |
| Mounting Style: | SMD/SMT |
| Package / Case: | SOIC-8 |
| Number of Drivers: | 2 Driver |
| Number of Outputs: | 2 Output |
| Output Current: | 1.7 A |
| Supply Voltage - Max: | 24 V |
| Rise Time: | 500 ns |
| Fall Time: | 600 ns |
| Minimum Operating Temperature: | - 40 C |
| Maximum Operating Temperature: | + 150 C |
| Series: | VNS1NV04DP-E |
| Qualification: | AEC-Q100 |
| Packaging: | Reel |
| Packaging: | Cut Tape |
| Packaging: | MouseReel |
| Brand: | STMicroelectronics |
| Moisture Sensitive: | Yes |
| Operating Supply Current: | 150 uA |
| Product Type: | Gate Drivers |
| Factory Pack Quantity: | 2500 |
| Subcategory: | PMIC - Power Management ICs |
| Technology: | Si |
| Unit Weight: | 0.005291 oz |
♠ OMNIFET II fully autoprotected Power MOSFET
The VNS1NV04DP-E is a device formed by two monolithic OMNIFET II chips housed in a standard SO-8 package. The OMNIFET II are designed in STMicroelectronics VIPower™ M0-3 technology: they are intended for replacement of standard Power MOSFETs from DC up to 50KHz applications. Built in thermal shutdown, linear current limitation and overvoltage clamp protects the chip in harsh environments.
Fault feedback can be detected by monitoring the voltage at the input pin.
• Linear current limitation
• Thermal shutdown
• Short circuit protection
• Integrated clamp
• Low current drawn from input pin
• Diagnostic feedback through input pin
• ESD protection
• Direct access to the gate of the power mosfet (analog driving)
• Compatible with standard power mosfet
• In compliance with the 2002/95/EC european directive
