CSD88537ND MOSFET 60-V Dual N-Channel Power MOSFET
♠ Product Description
| Product Attribute | Attribute Value |
| Manufacturer: | Texas Instruments |
| Product Category: | MOSFET |
| RoHS: | Details |
| Technology: | Si |
| Mounting Style: | SMD/SMT |
| Package/Case: | SOIC-8 |
| Transistor Polarity: | N-Channel |
| Number of Channels: | 2 Channel |
| Vds - Drain-Source Breakdown Voltage: | 60 V |
| Id - Continuous Drain Current: | 16 A |
| Rds On - Drain-Source Resistance: | 15 mOhms |
| Vgs - Gate-Source Voltage: | - 20 V, + 20 V |
| Vgs th - Gate-Source Threshold Voltage: | 2.6 V |
| Qg - Gate Charge: | 14 nC |
| Minimum Operating Temperature: | - 55 C |
| Maximum Operating Temperature: | + 150 C |
| Pd - Power Dissipation: | 2.1 W |
| Channel Mode: | Enhancement |
| Tradename: | NexFET |
| Packaging: | Reel |
| Packaging: | Cut Tape |
| Packaging: | MouseReel |
| Brand: | Texas Instruments |
| Configuration: | Dual |
| Fall Time: | 19 ns |
| Height: | 1.75 mm |
| Length: | 4.9 mm |
| Product Type: | MOSFET |
| Rise Time: | 15 ns |
| Series: | CSD88537ND |
| Factory Pack Quantity: | 2500 |
| Subcategory: | MOSFETs |
| Transistor Type: | 2 N-Channel |
| Typical Turn-Off Delay Time: | 5 ns |
| Typical Turn-On Delay Time: | 6 ns |
| Width: | 3.9 mm |
| Unit Weight: | 74 mg |
♠ CSD88537ND Dual 60-V N-Channel NexFET™ Power MOSFET
This dual SO-8, 60 V, 12.5 mΩ NexFET™ power MOSFET is designed to serve as a half bridge in low current motor control applications.
• Ultra-Low Qg and Qgd
• Avalanche Rated
• Pb Free
• RoHS Compliant
• Halogen Free
• Half Bridge for Motor Control
• Synchronous Buck Converter
