FDD4N60NZ MOSFET 2.5A Output Current GateDrive Optocopler

Manufacturers: ON Semiconductor

Product Category: Transistors – FETs, MOSFETs – Single

Data Sheet: FDD4N60NZ

Description: MOSFET N CH 600V 3.4A DPAK

RoHS status: RoHS Compliant

Product Detail

Product Attribute	Attribute Value
Manufacturer:	onsemi
Product Category:	MOSFET
RoHS:	Details
Technology:	Si
Mounting Style:	SMD/SMT
Package / Case:	DPAK-3
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	600 V
Id - Continuous Drain Current:	1.7 A
Rds On - Drain-Source Resistance:	1.9 Ohms
Vgs - Gate-Source Voltage:	- 25 V, + 25 V
Vgs th - Gate-Source Threshold Voltage:	5 V
Qg - Gate Charge:	8.3 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	114 W
Channel Mode:	Enhancement
Tradename:	UniFET
Packaging:	Reel
Packaging:	Cut Tape
Packaging:	MouseReel
Brand:	onsemi / Fairchild
Configuration:	Single
Fall Time:	12.8 ns
Forward Transconductance - Min:	3.4 S
Height:	2.39 mm
Length:	6.73 mm
Product:	MOSFET
Product Type:	MOSFET
Rise Time:	15.1 ns
Series:	FDD4N60NZ
Factory Pack Quantity:	2500
Subcategory:	MOSFETs
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	30.2 ns
Typical Turn-On Delay Time:	12.7 ns
Width:	6.22 mm
Unit Weight:	0.011640 oz