FQU2N60CTU MOSFET 600V N-Channel Adv Q-FET C-Series
♠ Product Description
| Product Attribute | Attribute Value |
| Manufacturer: | onsemi |
| Product Category: | MOSFET |
| Technology: | Si |
| Mounting Style: | Through Hole |
| Package / Case: | TO-251-3 |
| Transistor Polarity: | N-Channel |
| Number of Channels: | 1 Channel |
| Vds - Drain-Source Breakdown Voltage: | 600 V |
| Id - Continuous Drain Current: | 1.9 A |
| Rds On - Drain-Source Resistance: | 4.7 Ohms |
| Vgs - Gate-Source Voltage: | - 30 V, + 30 V |
| Vgs th - Gate-Source Threshold Voltage: | 2 V |
| Qg - Gate Charge: | 12 nC |
| Minimum Operating Temperature: | - 55 C |
| Maximum Operating Temperature: | + 150 C |
| Pd - Power Dissipation: | 2.5 W |
| Channel Mode: | Enhancement |
| Packaging: | Tube |
| Brand: | onsemi / Fairchild |
| Configuration: | Single |
| Fall Time: | 28 ns |
| Forward Transconductance - Min: | 5 S |
| Height: | 6.3 mm |
| Length: | 6.8 mm |
| Product Type: | MOSFET |
| Rise Time: | 25 ns |
| Series: | FQU2N60C |
| Factory Pack Quantity: | 5040 |
| Subcategory: | MOSFETs |
| Transistor Type: | 1 N-Channel |
| Type: | MOSFET |
| Typical Turn-Off Delay Time: | 24 ns |
| Typical Turn-On Delay Time: | 9 ns |
| Width: | 2.5 mm |
| Unit Weight: | 0.011993 oz |
♠ MOSFET – N-Channel, QFET 600 V, 1.9 A, 4,7
This N−Channel enhancement mode power MOSFET is roduced using onsemi’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on−state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
• 1.9 A, 600 V, RDS(on) = 4.7 (Max.) @ VGS = 10 V, ID = 0.95 A
• Low Gate Charge (Typ. 8.5 nC)
• Low Crss (Typ. 4.3 pF)
• 100% Avalanche Tested
• These Devices are Halid Free and are RoHS Compliant
