IPD50N04S4-10 MOSFET N-Ch 40V 50A DPAK-2 OptiMOS-T2
♠ Product Description
| Product Attribute | Attribute Value |
| Manufacturer: | Infineon |
| Product Category: | MOSFET |
| RoHS: | Details |
| Technology: | Si |
| Mounting Style: | SMD/SMT |
| Package/Case: | TO-252-3 |
| Transistor Polarity: | N-Channel |
| Number of Channels: | 1 Channel |
| Vds - Drain-Source Breakdown Voltage: | 40 V |
| Id - Continuous Drain Current: | 50 A |
| Rds On - Drain-Source Resistance: | 9.3 mOhms |
| Vgs - Gate-Source Voltage: | - 20 V, + 20 V |
| Vgs th - Gate-Source Threshold Voltage: | 3 V |
| Qg - Gate Charge: | 18.2 nC |
| Minimum Operating Temperature: | - 55 C |
| Maximum Operating Temperature: | + 175 C |
| Pd - Power Dissipation: | 41 W |
| Channel Mode: | Enhancement |
| Qualification: | AEC-Q101 |
| Tradename: | OptiMOS |
| Packaging: | Reel |
| Packaging: | Cut Tape |
| Brand: | Infineon Technologies |
| Configuration: | Single |
| Fall Time: | 5 ns |
| Height: | 2.3 mm |
| Length: | 6.5 mm |
| Product Type: | MOSFET |
| Rise Time: | 7 ns |
| Series: | OptiMOS-T2 |
| Factory Pack Quantity: | 2500 |
| Subcategory: | MOSFETs |
| Transistor Type: | 1 N-Channel |
| Typical Turn-Off Delay Time: | 4 ns |
| Typical Turn-On Delay Time: | 5 ns |
| Width: | 6.22 mm |
| Part # Aliases: | IPD5N4S41XT SP000711466 IPD50N04S410ATMA1 |
| Unit Weight: | 330 mg |
• N-channel – Enhancement mode
• AEC qualified
• MSL1 up to 260°C peak reflow
• 175°C operating temperature
• Green Product (RoHS compliant)
• 100% Avalanche tested
