IXFA22N65X2 MOSFET 650V/22A Ultra Junction X2
♠ Product Description
| Product Attribute | Attribute Value |
| Manufacturer: | IXYS |
| Product Category: | MOSFET |
| Technology: | Si |
| Mounting Style: | SMD/SMT |
| Package / Case: | TO-263-3 |
| Transistor Polarity: | N-Channel |
| Number of Channels: | 1 Channel |
| Vds - Drain-Source Breakdown Voltage: | 650 V |
| Id - Continuous Drain Current: | 22 A |
| Rds On - Drain-Source Resistance: | 160 mOhms |
| Vgs - Gate-Source Voltage: | - 30 V, + 30 V |
| Vgs th - Gate-Source Threshold Voltage: | 2.7 V |
| Qg - Gate Charge: | 38 nC |
| Minimum Operating Temperature: | - 55 C |
| Maximum Operating Temperature: | + 150 C |
| Pd - Power Dissipation: | 360 W |
| Channel Mode: | Enhancement |
| Tradename: | HiPerFET |
| Packaging: | Tube |
| Brand: | IXYS |
| Configuration: | Single |
| Fall Time: | 10 ns |
| Forward Transconductance - Min: | 8 S |
| Product Type: | MOSFET |
| Rise Time: | 35 ns |
| Series: | 650V Ultra Junction X2 |
| Factory Pack Quantity: | 50 |
| Subcategory: | MOSFETs |
| Typical Turn-Off Delay Time: | 33 ns |
| Typical Turn-On Delay Time: | 38 ns |
| Unit Weight: | 0.139332 oz |
