Product Detail
Product Tags
| Product Attribute |
Attribute Value |
| Manufacturer: |
IXYS |
| Product Category: |
MOSFET |
| Technology: |
Si |
| Mounting Style: |
SMD/SMT |
| Package / Case: |
TO-263-3 |
| Transistor Polarity: |
N-Channel |
| Number of Channels: |
1 Channel |
| Vds - Drain-Source Breakdown Voltage: |
650 V |
| Id - Continuous Drain Current: |
22 A |
| Rds On - Drain-Source Resistance: |
160 mOhms |
| Vgs - Gate-Source Voltage: |
- 30 V, + 30 V |
| Vgs th - Gate-Source Threshold Voltage: |
2.7 V |
| Qg - Gate Charge: |
38 nC |
| Minimum Operating Temperature: |
- 55 C |
| Maximum Operating Temperature: |
+ 150 C |
| Pd - Power Dissipation: |
360 W |
| Channel Mode: |
Enhancement |
| Tradename: |
HiPerFET |
| Packaging: |
Tube |
| Brand: |
IXYS |
| Configuration: |
Single |
| Fall Time: |
10 ns |
| Forward Transconductance - Min: |
8 S |
| Product Type: |
MOSFET |
| Rise Time: |
35 ns |
| Series: |
650V Ultra Junction X2 |
| Factory Pack Quantity: |
50 |
| Subcategory: |
MOSFETs |
| Typical Turn-Off Delay Time: |
33 ns |
| Typical Turn-On Delay Time: |
38 ns |
| Unit Weight: |
0.139332 oz |
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