NDS331N MOSFET N-Ch LL FET Enhancement Mode
♠ Product Description
| Product Attribute | Attribute Value |
| Manufacturer: | onsemi |
| Product Category: | MOSFET |
| Technology: | Si |
| Mounting Style: | SMD/SMT |
| Package / Case: | SOT-23-3 |
| Transistor Polarity: | N-Channel |
| Number of Channels: | 1 Channel |
| Vds - Drain-Source Breakdown Voltage: | 20 V |
| Id - Continuous Drain Current: | 1.3 A |
| Rds On - Drain-Source Resistance: | 210 mOhms |
| Vgs - Gate-Source Voltage: | - 8 V, + 8 V |
| Vgs th - Gate-Source Threshold Voltage: | 500 mV |
| Qg - Gate Charge: | 5 nC |
| Minimum Operating Temperature: | - 55 C |
| Maximum Operating Temperature: | + 150 C |
| Pd - Power Dissipation: | 500 mW |
| Channel Mode: | Enhancement |
| Packaging: | Reel |
| Packaging: | Cut Tape |
| Packaging: | MouseReel |
| Brand: | onsemi / Fairchild |
| Configuration: | Single |
| Fall Time: | 25 ns |
| Height: | 1.12 mm |
| Length: | 2.9 mm |
| Product: | MOSFET Small Signal |
| Product Type: | MOSFET |
| Rise Time: | 25 ns |
| Series: | NDS331N |
| Factory Pack Quantity: | 3000 |
| Subcategory: | MOSFETs |
| Transistor Type: | 1 N-Channel |
| Type: | MOSFET |
| Typical Turn-Off Delay Time: | 10 ns |
| Typical Turn-On Delay Time: | 5 ns |
| Width: | 1.4 mm |
| Part # Aliases: | NDS331N_NL |
| Unit Weight: | 0.001129 oz |
♠ N-Channel Logic Level Enhancement Mode Field Effect Transistor
These N−Channel logic level enhancement mode power field effect transistors are produced using ON Semiconductor’s proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on−state resistance. These devices are particularly suited for low voltage applications in notebook computers, portable phones, PCMCIA cards, and other battery powered circuits where fast switching, and low in−line power loss are needed in a very small outline surface mount package.
• 1.3 A, 20 V
♦ RDS(on) = 0.21 @ VGS = 2.7 V
♦ RDS(on) = 0.16 @ VGS = 4.5 V
• Industry Standard Outline SOT−23 Surface Mount Package Using
Proprietary SUPERSOT−3 Design for Superior Thermal and Electrical Capabilities
• High Density Cell Design for Extremely Low RDS(on)
• Exceptional On−Resistance and Maximum DC Current Capability
• This is a Pb−Free Device
