SI1029X-T1-GE3 MOSFET 60V Vds 20V Vgs SC89-6 N&P PAIR
♠ Product Description
| Product Attribute | Attribute Value |
| Manufacturer: | Vishay |
| Product Category: | MOSFET |
| RoHS: | Details |
| Technology: | Si |
| Mounting Style: | SMD/SMT |
| Package/Case: | SC-89-6 |
| Transistor Polarity: | N-Channel, P-Channel |
| Number of Channels: | 2 Channel |
| Vds - Drain-Source Breakdown Voltage: | 60 V |
| Id - Continuous Drain Current: | 500 mA |
| Rds On - Drain-Source Resistance: | 1.4 Ohms, 4 Ohms |
| Vgs - Gate-Source Voltage: | - 20 V, + 20 V |
| Vgs th - Gate-Source Threshold Voltage: | 1 V |
| Qg - Gate Charge: | 750 pC, 1.7 nC |
| Minimum Operating Temperature: | - 55 C |
| Maximum Operating Temperature: | + 150 C |
| Pd - Power Dissipation: | 280 mW |
| Channel Mode: | Enhancement |
| Tradename: | TrenchFET |
| Packaging: | Reel |
| Packaging: | Cut Tape |
| Packaging: | MouseReel |
| Brand: | Vishay Semiconductors |
| Configuration: | Dual |
| Forward Transconductance - Min: | 200 mS, 100 mS |
| Height: | 0.6 mm |
| Length: | 1.66 mm |
| Product Type: | MOSFET |
| Series: | SI1 |
| Factory Pack Quantity: | 3000 |
| Subcategory: | MOSFETs |
| Transistor Type: | 1 N-Channel, 1 P-Channel |
| Typical Turn-Off Delay Time: | 20 ns, 35 ns |
| Typical Turn-On Delay Time: | 15 ns, 20 ns |
| Width: | 1.2 mm |
| Part # Aliases: | SI1029X-GE3 |
| Unit Weight: | 32 mg |
• Halogen-free According to IEC 61249-2-21 Definition
• TrenchFET® Power MOSFETs
• Very Small Footprint
• High-Side Switching
• Low On-Resistance:
N-Channel, 1.40 Ω
P-Channel, 4 Ω
• Low Threshold: ± 2 V (typ.)
• Fast Switching Speed: 15 ns (typ.)
• Gate-Source ESD Protected: 2000 V
• Compliant to RoHS Directive 2002/95/EC
• Replace Digital Transistor, Level-Shifter
• Battery Operated Systems
• Power Supply Converter Circuits
