SI7119DN-T1-GE3 MOSFET -200V Vds 20V Vgs PowerPAK 1212-8
♠ Product Description
| Product Attribute | Attribute Value |
| Manufacturer: | Vishay |
| Product Category: | MOSFET |
| RoHS: | Details |
| Technology: | Si |
| Mounting Style: | SMD/SMT |
| Package/Case: | PowerPAK-1212-8 |
| Transistor Polarity: | P-Channel |
| Number of Channels: | 1 Channel |
| Vds - Drain-Source Breakdown Voltage: | 200 V |
| Id - Continuous Drain Current: | 3.8 A |
| Rds On - Drain-Source Resistance: | 1.05 Ohms |
| Vgs - Gate-Source Voltage: | - 20 V, + 20 V |
| Vgs th - Gate-Source Threshold Voltage: | 2 V |
| Qg - Gate Charge: | 25 nC |
| Minimum Operating Temperature: | - 50 C |
| Maximum Operating Temperature: | + 150 C |
| Pd - Power Dissipation: | 52 W |
| Channel Mode: | Enhancement |
| Tradename: | TrenchFET |
| Packaging: | Reel |
| Packaging: | Cut Tape |
| Packaging: | MouseReel |
| Brand: | Vishay Semiconductors |
| Configuration: | Single |
| Fall Time: | 12 ns |
| Forward Transconductance - Min: | 4 S |
| Height: | 1.04 mm |
| Length: | 3.3 mm |
| Product Type: | MOSFET |
| Rise Time: | 11 ns |
| Series: | SI7 |
| Factory Pack Quantity: | 3000 |
| Subcategory: | MOSFETs |
| Transistor Type: | 1 P-Channel |
| Typical Turn-Off Delay Time: | 27 ns |
| Typical Turn-On Delay Time: | 9 ns |
| Width: | 3.3 mm |
| Part # Aliases: | SI7119DN-GE3 |
| Unit Weight: | 1 g |
• Halogen-free According to IEC 61249-2-21 Available
• TrenchFET® Power MOSFET
• Low Thermal Resistance PowerPAK® Package with Small Size and Low 1.07 mm Profile
• 100 % UIS and Rg Tested
• Active Clamp in Intermediate DC/DC Power Supplies
