SQJ951EP-T1_GE3 MOSFET Dual P-Channel 30V AEC-Q101 Qualified
♠ Product Description
| Product Attribute | Attribute Value |
| Manufacturer: | Vishay |
| Product Category: | MOSFET |
| Technology: | Si |
| Mounting Style: | SMD/SMT |
| Package / Case: | PowerPAK-SO-8-4 |
| Transistor Polarity: | P-Channel |
| Number of Channels: | 2 Channel |
| Vds - Drain-Source Breakdown Voltage: | 30 V |
| Id - Continuous Drain Current: | 30 A |
| Rds On - Drain-Source Resistance: | 14 mOhms |
| Vgs - Gate-Source Voltage: | - 20 V, + 20 V |
| Vgs th - Gate-Source Threshold Voltage: | 2.5 V |
| Qg - Gate Charge: | 50 nC |
| Minimum Operating Temperature: | - 55 C |
| Maximum Operating Temperature: | + 175 C |
| Pd - Power Dissipation: | 56 W |
| Channel Mode: | Enhancement |
| Qualification: | AEC-Q101 |
| Tradename: | TrenchFET |
| Packaging: | Reel |
| Packaging: | Cut Tape |
| Packaging: | MouseReel |
| Brand: | Vishay Semiconductors |
| Configuration: | Dual |
| Fall Time: | 28 ns |
| Product Type: | MOSFET |
| Rise Time: | 12 ns |
| Series: | SQ |
| Factory Pack Quantity: | 3000 |
| Subcategory: | MOSFETs |
| Transistor Type: | 2 P-Channel |
| Typical Turn-Off Delay Time: | 39 ns |
| Typical Turn-On Delay Time: | 12 ns |
| Part # Aliases: | SQJ951EP-T1_BE3 |
| Unit Weight: | 0.017870 oz |
• Halogen-free According to IEC 61249-2-21 Definition
• TrenchFET® Power MOSFET
• AEC-Q101 Qualifiedd
• 100 % Rg and UIS Tested
• Compliant to RoHS Directive 2002/95/EC
