STD35P6LLF6 MOSFET P-channel 60V 0.025Ohm typ 35A STripFET F6 Power MOSFET

Short Description:

Manufacturers: STMicroelectronics
Product Category: Transistors – FETs, MOSFETs – Single
Data Sheet: STD35P6LLF6
Description: MOSFET P-CH 60V 35A DPAK
RoHS status: RoHS Compliant


Product Detail

Features

applications

Product Tags

♠ Product Description

Product Attribute Attribute Value
Manufacturer: STMicroelectronics
Product Category: MOSFET
RoHS:  Details
Technology: Si
Mounting Style: SMD/SMT
Package / Case: TO-252-3
Transistor Polarity: P-Channel
Number of Channels: 1 Channel
Vds - Drain-Source Breakdown Voltage: 60 V
Id - Continuous Drain Current: 35 A
Rds On - Drain-Source Resistance: 28 mOhms
Vgs - Gate-Source Voltage: - 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage: 1 V
Qg - Gate Charge: 30 nC
Minimum Operating Temperature: - 55 C
Maximum Operating Temperature: + 175 C
Pd - Power Dissipation: 70 W
Channel Mode: Enhancement
Tradename: STripFET
Series: STD35P6LLF6
Packaging: Reel
Packaging: Cut Tape
Packaging: MouseReel
Brand: STMicroelectronics
Configuration: Single
Fall Time: 21 ns
Product Type: MOSFET
Rise Time: 39 ns
Factory Pack Quantity: 2500
Subcategory: MOSFETs
Transistor Type: 1 P-Channel Power MOSFET
Typical Turn-Off Delay Time: 171 ns
Typical Turn-On Delay Time: 51.4 ns
Unit Weight: 0.011640 oz

♠ STD35P6LLF6 P-channel 60 V, 0.025 Ω typ., 35 A STripFET™ F6 Power MOSFET in a DPAK package

This device is a P-channel Power MOSFET developed using the STripFET™ F6 technology, with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) in all packages.


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  •  Very low on-resistance

     Very low gate charge

     High avalanche ruggedness

     Low gate drive power loss

     Switching applications

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