STH3N150-2 MOSFET N-CH 1500V 6Ohm 2.5A PowerMESH

Short Description:

Manufacturers: STMicroelectronics
Product Category:MOSFET
Data Sheet:STH3N150-2
Description:MOSFET N-CH 1500V 2.5A H2PAK-2
RoHS status: RoHS Compliant


Product Detail

Features

Applications

Product Tags

♠ Product Description

Product Attribute Attribute Value
Manufacturer: STMicroelectronics
Product Category: MOSFET
RoHS:  Details
Technology: Si
Mounting Style: SMD/SMT
Package/Case: H2PAK-2
Transistor Polarity: N-Channel
Number of Channels: 1 Channel
Vds - Drain-Source Breakdown Voltage: 1.5 kV
Id - Continuous Drain Current: 2.5 A
Rds On - Drain-Source Resistance: 9 Ohms
Vgs - Gate-Source Voltage: - 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage: 3 V
Qg - Gate Charge: 29.3 nC
Minimum Operating Temperature: - 55 C
Maximum Operating Temperature: + 150 C
Pd - Power Dissipation: 140 W
Channel Mode: Enhancement
Tradename: PowerMESH
Packaging: Reel
Packaging: Cut Tape
Packaging: MouseReel
Brand: STMicroelectronics
Configuration: Single
Fall Time: 61 ns
Forward Transconductance - Min: 2.6 S
Product Type: MOSFET
Rise Time: 47 ns
Series: STH3N150-2
Factory Pack Quantity: 1000
Subcategory: MOSFETs
Transistor Type: 1 N-Channel Power MOSFET
Typical Turn-Off Delay Time: 45 ns
Typical Turn-On Delay Time: 24 ns
Unit Weight: 4 g

♠ N-channel 1500 V, 2.5 A, 6 Ω typ., PowerMESH Power MOSFETs in TO-3PF, H2PAK-2, TO-220 and TO247 packages

These Power MOSFETs are designed using the STMicroelectronics consolidated strip-layout-based MESH OVERLAY process. The result is a product that matches or improves on the performance of comparable standard parts from other manufacturers.


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  •  • 100% avalanche tested

    • Intrinsic capacitances and Qg minimized

    • High speed switching

    • Fully isolated TO-3PF plastic package, creepage distance path is 5.4 mm (typ.)

     

    • Switching applications

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