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BSS123 MOSFET SOT-23 N-CH LOGIC

BSS123 MOSFET SOT-23 N-CH LOGIC Featured Image
  • BSS123 MOSFET SOT-23 N-CH LOGIC

Short Description:

Manufacturers: ON Semiconductor
Product Category: Transistors – FETs, MOSFETs – Single
Data Sheet: BSS123
Description: MOSFET N-CH 100V 170MA SOT-23
RoHS status: RoHS Compliant


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Product Detail

Features

Application

Product Tags

♠ Product Description

Product Attribute Attribute Value
Manufacturer: onsemi
Product Category: MOSFET
Technology: Si
Mounting Style: SMD/SMT
Package / Case: SOT-23-3
Transistor Polarity: N-Channel
Number of Channels: 1 Channel
Vds - Drain-Source Breakdown Voltage: 100 V
Id - Continuous Drain Current: 170 mA
Rds On - Drain-Source Resistance: 6 Ohms
Vgs - Gate-Source Voltage: - 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage: 800 mV
Qg - Gate Charge: 2.5 nC
Minimum Operating Temperature: - 55 C
Maximum Operating Temperature: + 150 C
Pd - Power Dissipation: 300 mW
Channel Mode: Enhancement
Packaging: Reel
Packaging: Cut Tape
Packaging: MouseReel
Brand: onsemi / Fairchild
Configuration: Single
Fall Time: 9 ns
Forward Transconductance - Min: 0.8 S
Height: 1.2 mm
Length: 2.9 mm
Product: MOSFET Small Signal
Product Type: MOSFET
Rise Time: 9 ns
Series: BSS123
Factory Pack Quantity: 3000
Subcategory: MOSFETs
Transistor Type: 1 N-Channel
Type: FET
Typical Turn-Off Delay Time: 17 ns
Typical Turn-On Delay Time: 1.7 ns
Width: 1.3 mm
Part # Aliases: BSS123_NL
Unit Weight: 0.000282 oz

 

♠ N-Channel Logic Level Enhancement Mode Field Effect Transistor

These N−Channel enhancement mode field effect transistors are produced using onsemi’s proprietary, high cell density, DMOS technology. These products have been designed to minimize on−state resistance while provide rugged, reliable, and fast switching performance. These products are particularly suited for low voltage, low current applications such as small servo motor control, power MOSFET gate drivers, and other switching applications.


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  • • 0.17 A, 100 V
    ♦ RDS(on) = 6 @ VGS = 10 V
    ♦ RDS(on) = 10 @ VGS = 4.5 V

    • High Density Cell Design for Extremely Low RDS(on)

    • Rugged and Reliable

    • Compact Industry Standard SOT−23 Surface Mount Package

    • This Device is Pb−Free and Halogen Free

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