STD86N3LH5 MOSFET N-channel 30 V

Short Description:

Manufacturers: STMicroelectronics
Product Category: MOSFET 
Data Sheet:STD86N3LH5 
Description:MOSFET N-CH 30V 80A DPAK
RoHS status: RoHS Compliant


Product Detail

Features

Application

Product Tags

♠ Product Description

Product Attribute Attribute Value
Manufacturer: STMicroelectronics
Product Category: MOSFET
RoHS:  Details
Technology: Si
Mounting Style: SMD/SMT
Package/Case: TO-252-3
Transistor Polarity: N-Channel
Number of Channels: 1 Channel
Vds - Drain-Source Breakdown Voltage: 30 V
Id - Continuous Drain Current: 80 A
Rds On - Drain-Source Resistance: 5 mOhms
Vgs - Gate-Source Voltage: - 22 V, + 22 V
Vgs th - Gate-Source Threshold Voltage: 1 V
Qg - Gate Charge: 14 nC
Minimum Operating Temperature: - 55 C
Maximum Operating Temperature: + 175 C
Pd - Power Dissipation: 70 W
Channel Mode: Enhancement
Qualification: AEC-Q101
Packaging: Reel
Packaging: Cut Tape
Packaging: MouseReel
Brand: STMicroelectronics
Configuration: Single
Fall Time: 10.8 ns
Height: 2.4 mm
Length: 6.6 mm
Product Type: MOSFET
Rise Time: 14 ns
Series: STD86N3LH5
Factory Pack Quantity: 2500
Subcategory: MOSFETs
Transistor Type: 1 N-Channel
Typical Turn-Off Delay Time: 23.6 ns
Typical Turn-On Delay Time: 6 ns
Width: 6.2 mm
Unit Weight: 330 mg

♠ Automotive-grade N-channel 30 V, 0.0045 Ω typ, 80 A STripFET H5 Power MOSFET in a DPAK package

This device is an N-channel Power MOSFET developed using STMicroelectronics’ STripFET™ H5 technology. The device has been optimized to achieve very low on-state resistance, contributing to a FoM that is among the best in its class.


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  • • Designed for automotive applications and AEC-Q101 qualified

    • Low on-resistance RDS(on)

    • High avalanche ruggedness

    • Low gate drive power losses

    • Switching applications

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